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TK155U60Z1,RQ

Name: Toshiba TK155U60Z1,RQ
Brand: Toshiba
SKU: 757-TK155U60Z1RQ
Price: 22.23 DKK
Availability: InStock

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See Product Specifications

Mouser No:

757-TK155U60Z1RQ

Mfr. No:

TK155U60Z1,RQ

Mfr.:

Toshiba

Description:

MOSFETs N-ch MOSFET, 600 V, 0.155 ohma.10V, TOLL, DTMOS?

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK155U60Z1,RQ Datasheet

ECAD Model:

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More Information

Learn more about Toshiba TK155U60Z1,RQ

In Stock: 1.997

Stock:: 1.997 Can Dispatch Immediately

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Factory Lead Time:: 10 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	22,23 kr.	22,23 kr.
	14,47 kr.	144,70 kr.
	10,07 kr.	1.007,00 kr.
	8,73 kr.	4.365,00 kr.
Full Reel (Order in multiples of 2000)
	7,42 kr.	14.840,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TOLL-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	155 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	24 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	130 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Single
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	15 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	70 ns
Typical Turn-On Delay Time:	34 ns

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Datasheet

TK155U60Z1,RQ Datasheet

Application Notes

Models

Product Catalogs

Selection Guide 2025 - MOSFETs

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [R_DS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.