TJ80S04M3L,LXHQ
See Product Specifications
Mfr.:
Description:
MOSFETs 100W 1MHz Automotive; AEC-Q101
In Stock: 4.116
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Stock:
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Pricing (DKK)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| 12,61 kr. | 12,61 kr. | |
| 8,95 kr. | 89,50 kr. | |
| 6,05 kr. | 605,00 kr. | |
| 4,87 kr. | 2.435,00 kr. | |
| 4,53 kr. | 4.530,00 kr. | |
| Full Reel (Order in multiples of 2000) | ||
| 3,92 kr. | 7.840,00 kr. | |
Datasheet
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
- TARIC:
- 8541290000
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- ECCN:
- EAR99
Denmark

Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2