TGA2622-SM

Qorvo
772-TGA2622-SM
TGA2622-SM

Mfr.:

Description:
RF Amplifier 9-10GHz 35W GaN PAE >42% SSG >30dB

Datasheet:
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6.148,38 kr. 6.148,38 kr.
5.402,08 kr. 54.020,80 kr.

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Amplifier
Delivery Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
9 GHz to 10 GHz
28 V
290 mA
32.7 dB
Power Amplifiers
SMD/SMT
QFN-22
GaN SiC
40 dBm
- 40 C
+ 85 C
TGA2622
Waffle
Brand: Qorvo
Development Kit: TGA2622-SM EVB
Input Return Loss: 14.7 dB
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Pd - Power Dissipation: 88 W
Product Type: RF Amplifier
Factory Pack Quantity: 10
Subcategory: Wireless & RF Integrated Circuits
Part # Aliases: TGA2622 1132087
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TARIC:
8542330000
CNHTS:
8542319090
CAHTS:
8542330000
USHTS:
8542330001
KRHTS:
8532331000
MXHTS:
8542330201
ECCN:
3A001.b.2.b.2

TriQuint GaN Solutions

TriQuint leads the market in developing gallium nitride (GaN) products and processes. TriQuint's GaN technology supports RF requirements up to 40GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before. TriQuint narrowband amplifiers provide higher power with smaller form factors compared to previous generations. TriQuint wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components.
Learn More

GaN Power Amplifiers

Qorvo GaN Power Amplifiers allow unique, cost-effective solutions across a variety of applications. With these high-power amplifiers designed for military, commercial, satellite communications and radar systems, Qorvo offers GaN-based products meeting today's market needs and future requirements.

T1GA26xx-SM Low Noise Amplifiers

Qorvo TGA26xx-SM Low Noise Amplifiers are fabricated on a 0.25um GaN on SiC process (TQGaN25). Covering 2GHz to 6GHz, the TGA26xx-SM Amplifiers typically provides >22dB small signal gain and 30dBm of OTOI with 1.0dB NF. In addition to the high electrical performance, this GaN amplifier also provides a high level of input power robustness. Able to survive a high level of input power without performance degradation, Qorvo TGA26xx-SM provides flexibility regarding receive chain protection, resulting in reduced board space. This device is ideal for radar and satellite communication applications.

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