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STGP8M120DF3

Name: STMicroelectronics STGP8M120DF3
Brand: STMicroelectronics
SKU: 511-STGP8M120DF3
Price: 33.94 DKK
Availability: InStock

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Mouser No:

511-STGP8M120DF3

Mfr. No:

STGP8M120DF3

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package

Complete Your Design

Datasheet:

STGP8M120DF3 Datasheet (PDF)

ECAD Model:

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In Stock: 138

Stock:: 138

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On Order:: 1.000

Expected 21/09/2026
Factory Lead Time:: 15

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	33,94 kr.	33,94 kr.
	22,60 kr.	226,00 kr.
	18,28 kr.	1.828,00 kr.
	16,26 kr.	8.130,00 kr.
	14,40 kr.	14.400,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-220-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.85 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	16 A
Pd - Power Dissipation:	167 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	M
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	8 A
Gate-Emitter Leakage Current:	250 uA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	2 g

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Datasheet

STGP8M120DF3 Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive V_CE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.