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STGP30H60DFB

Name: STMicroelectronics STGP30H60DFB
Brand: STMicroelectronics
SKU: 511-STGP30H60DFB
Price: 18.43 DKK
Availability: InStock

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Mouser No:

511-STGP30H60DFB

Mfr. No:

STGP30H60DFB

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT

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Datasheet:

STGP30H60DFB Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STGP30H60DFB

In Stock: 3.169

Stock:: 3.169 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	18,43 kr.	18,43 kr.
	9,10 kr.	91,00 kr.
	8,21 kr.	821,00 kr.
	6,67 kr.	3.335,00 kr.
	6,11 kr.	6.110,00 kr.
	5,80 kr.	11.600,00 kr.
	5,74 kr.	28.700,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-220-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	60 A
Pd - Power Dissipation:	260 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGP30H60DFB
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	60 A
Gate-Emitter Leakage Current:	+/- 250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	2 g

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Datasheet

STGP30H60DFB Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

HB Trench Gate Field-Stop IGBTs

STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.