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STF80N600K6

Name: STMicroelectronics STF80N600K6
Brand: STMicroelectronics
SKU: 511-STF80N600K6
Price: 20.37 DKK
Availability: InStock

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Mouser No:

511-STF80N600K6

Mfr. No:

STF80N600K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STF80N600K6 Datasheet (PDF)

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Learn more about STMicroelectronics STF80N600K6

In Stock: 1.047

Stock:: 1.047 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	20,37 kr.	20,37 kr.
	13,28 kr.	132,80 kr.
	10,15 kr.	1.015,00 kr.
	8,50 kr.	4.250,00 kr.
	7,25 kr.	7.250,00 kr.
	6,93 kr.	17.325,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220FP-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	7 A
Rds On - Drain-Source Resistance:	600 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	10.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	23 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	12.6 ns
Product Type:	MOSFETs
Rise Time:	4.1 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28.2 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	1,690 g

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Datasheet

STF80N600K6 Datasheet (PDF)

PCN

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.