STB33N60M2

STMicroelectronics
511-STB33N60M2
STB33N60M2

Mfr.:

Description:
MOSFETs N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in D2PAK package
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Datasheet:
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In Stock: 1.387

Stock:
1.387 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
31,11 kr. 31,11 kr.
20,52 kr. 205,20 kr.
16,04 kr. 1.604,00 kr.
14,32 kr. 7.160,00 kr.
Full Reel (Order in multiples of 1000)
12,23 kr. 12.230,00 kr.
11,56 kr. 23.120,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
600 V
26 A
125 mOhms
- 25 V, 25 V
3 V
45.5 nC
- 55 C
+ 150 C
190 W
Enhancement
MDmesh
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 9 ns
Product Type: MOSFETs
Rise Time: 9.6 ns
Series: STB33N60M2
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 109 ns
Typical Turn-On Delay Time: 16 ns
Unit Weight: 4 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

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