SSM6K518NU,LF

Toshiba
757-SSM6K518NULF
SSM6K518NU,LF

Mfr.:

Description:
MOSFETs 30V/20V Nch single MOSFET Id: 6A Rdson: 40mOhm @ 1.8V

ECAD Model:
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In Stock: 4.165

Stock:
4.165 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
0,895 kr. 0,90 kr.
0,888 kr. 8,88 kr.
Full Reel (Order in multiples of 3000)
0,746 kr. 2.238,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
UDFN-6B
N-Channel
1 Channel
20 V
6 A
108 mOhms
- 8 V, 8 V
1 V
3.6 nC
- 55 C
+ 150 C
1.25 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Toshiba
Forward Transconductance - Min: 12 S
Product Type: MOSFETs
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 25 ns
Unit Weight: 8,500 mg
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

SSM6K51xNU Silicon N-Channel MOSFETs

Toshiba SSM6K51xNU Silicon N-Channel MOSFETs are part of Toshiba's extensive portfolio of MOSFETs in various circuit configurations and packages. The devices feature high speed, high performance, low loss, low on-resistance, small packaging, and more. The Toshiba SSM6K51xNU MOSFETs are ideal for power management switches and feature high-speed switching. These devices have a 1.5V drive with low drain-source on-resistance.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.