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SSM6K516NU,LF

Name: Toshiba SSM6K516NU,LF
Brand: Toshiba
SKU: 757-SSM6K516NULF
Price: 4.36 DKK
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM6K516NULF

Mfr. No:

SSM6K516NU,LF

Mfr.:

Toshiba

Description:

MOSFETs UDFN6B N-CH 30V 6A

Datasheet:

SSM6K516NU,LF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM6K516NU,LF

In Stock: 5.276

Stock:: 5.276 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	4,36 kr.	4,36 kr.
	2,68 kr.	26,80 kr.
	1,72 kr.	172,00 kr.
	1,31 kr.	655,00 kr.
	1,17 kr.	1.170,00 kr.
Full Reel (Order in multiples of 3000)
	1,03 kr.	3.090,00 kr.
	0,806 kr.	4.836,00 kr.
	0,746 kr.	6.714,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	UDFN-6B
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	46 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	2.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Forward Transconductance - Min:	6.8 S
Product Type:	MOSFETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	8,500 mg

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Datasheet

SSM6K516NU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.

SSM6K51xNU Silicon N-Channel MOSFETs

Toshiba SSM6K51xNU Silicon N-Channel MOSFETs are part of Toshiba's extensive portfolio of MOSFETs in various circuit configurations and packages. The devices feature high speed, high performance, low loss, low on-resistance, small packaging, and more. The Toshiba SSM6K51xNU MOSFETs are ideal for power management switches and feature high-speed switching. These devices have a 1.5V drive with low drain-source on-resistance.