SSM3K333R,LF

Toshiba
757-SSM3K333RLF
SSM3K333R,LF

Mfr.:

Description:
MOSFETs SM Sig N-CH MOS 30V 6A 20V VGSS

ECAD Model:
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In Stock: 72.941

Stock:
72.941 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
2,89 kr. 2,89 kr.
1,79 kr. 17,90 kr.
1,13 kr. 113,00 kr.
0,85 kr. 425,00 kr.
0,753 kr. 753,00 kr.
Full Reel (Order in multiples of 3000)
0,619 kr. 1.857,00 kr.
0,56 kr. 3.360,00 kr.
0,477 kr. 4.293,00 kr.
0,47 kr. 11.280,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
N-Channel
1 Channel
AEC-Q100
U-MOSVII-H
Reel
Cut Tape
MouseReel
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: SSM3K333
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 11 mg
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Attributes selected: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

SSM3K333R 30V N-Channel MOSFET

Toshiba SSM3K333R 30V N-Channel MOSFET is designed for small mobile devices. This MOSFET employs the Gen 7 N-channel process and is mounted on the SOT-23F package, which offers good radiation performance and low on-resistance (RDS(on)). Typical applications for Toshiba SSM3K333R 30V N-Channel MOSFET include power management switch and high-speed switching.

Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low RON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.