SQUN702E-T1_GE3

Vishay Semiconductors
78-SQUN702E-T1_GE3
SQUN702E-T1_GE3

Mfr.:

Description:
MOSFETs 40-V N- & P-CH COMMON DRAIN + 200-V

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Vishay Semiconductors SQUN702E-T1_GE3

Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
27,90 kr. 27,90 kr.
20,89 kr. 208,90 kr.
18,13 kr. 1.813,00 kr.
Full Reel (Order in multiples of 2000)
15,37 kr. 30.740,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
Triple die
N-Channel, P-Channel
3 Channel
40 V, 200 V
20 A, 30 A
9.2 mOhms, 30 mOhms, 60 mOhms
- 25 V, 25 V
1.5 V, 2.5 V
14 nC, 23 nC, 30.2 nC
- 55 C
+ 175 C
48 W, 60 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Configuration: Triple
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: DE
Fall Time: 2 ns, 10 ns, 19 ns
Forward Transconductance - Min: 16 S, 19 S, 65 S
Product Type: MOSFETs
Rise Time: 3 ns, 9 ns, 12 ns
Series: SQUN
Factory Pack Quantity: 2000
Subcategory: Transistors
Transistor Type: 2 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time: 15 ns, 22 ns, 43 ns
Typical Turn-On Delay Time: 7 ns, 8 ns, 10 ns
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 

Integrated MOSFETs with Common Drain

Vishay Integrated MOSFETs with Common Drain are 1, 2, and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

N- & P-Channel Pair Thermally Enhanced MOSFETs

Vishay N- and P-Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one package. These Vishay N- and P-Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.