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SI8902AEDB-T2-E1

Name: Vishay SI8902AEDB-T2-E1
Brand: Vishay Semiconductors
SKU: 78-SI8902AEDB-T2-E1
Price: 2.46 DKK
Availability: OutOfStock

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Mouser No:

78-SI8902AEDB-T2-E1

Mfr. No:

SI8902AEDB-T2-E1

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 24V Vds 12V Vgs MICRO FOOT 2.4 x 1.6

Datasheet:

SI8902AEDB-T2-E1 Datasheet

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	2,46 kr.	14.760,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	MicroFoot-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	24 V
Id - Continuous Drain Current:	11 A
Rds On - Drain-Source Resistance:	28 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	5.7 W
Channel Mode:	Enhancement
Packaging:	Reel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	12 us
Forward Transconductance - Min:	15 S
Product Type:	MOSFETs
Rise Time:	3.5 us
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25 us
Typical Turn-On Delay Time:	1.5 us
Unit Weight:	128,380 mg

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Datasheet

SI8902AEDB-T2-E1 Datasheet

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Integrated MOSFETs with Common Drain

Vishay Integrated MOSFETs with Common Drain are 1, 2, and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.