SI8819EDB-T2-E1

Vishay Semiconductors
78-SI8819EDB-T2-E1
SI8819EDB-T2-E1

Mfr.:

Description:
MOSFETs -12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 246

Stock:
246
Can Dispatch Immediately
On Order:
6.000
Expected 11/03/2027
Factory Lead Time:
72
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
3,72 kr. 3,72 kr.
2,26 kr. 22,60 kr.
1,48 kr. 148,00 kr.
1,09 kr. 545,00 kr.
0,97 kr. 970,00 kr.
Full Reel (Order in multiples of 3000)
0,806 kr. 2.418,00 kr.

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
MicroFoot-4
P-Channel
1 Channel
12 V
2.9 A
80 mOhms
- 8 V, 8 V
900 mV
7 nC
- 55 C
+ 150 C
900 mW
Enhancement
Reel
Cut Tape
Brand: Vishay Semiconductors
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Product Type: MOSFETs
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 45,104 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.