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SI8806DB-T2-E1

Name: Vishay SI8806DB-T2-E1
Brand: Vishay / Siliconix
SKU: 78-SI8806DB-T2-E1
Price: 4.49 DKK
Availability: InStock

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See Product Specifications

Mouser No:

78-SI8806DB-T2-E1

Mfr. No:

SI8806DB-T2-E1

Mfr.:

Vishay / Siliconix

Description:

MOSFETs 12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8

Datasheet:

SI8806DB-T2-E1 Datasheet

ECAD Model:

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Learn more about Vishay / Siliconix SI8806DB-T2-E1

In Stock: 23.950

Stock:: 23.950 Can Dispatch Immediately

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Factory Lead Time:: 1 Week Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	4,49 kr.	4,49 kr.
	2,79 kr.	27,90 kr.
	1,81 kr.	181,00 kr.
	1,39 kr.	695,00 kr.
	1,23 kr.	1.230,00 kr.
Full Reel (Order in multiples of 3000)
	1,04 kr.	3.120,00 kr.
	0,955 kr.	5.730,00 kr.
	0,873 kr.	7.857,00 kr.
	0,836 kr.	20.064,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	MicroFoot-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	3.9 A
Rds On - Drain-Source Resistance:	47 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	900 mW
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Product Type:	MOSFETs
Series:	SI8
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	120 mg

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Datasheet

SI8806DB-T2-E1 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (R_DS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.