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SCT4036DWAHRTL

Name: ROHM Semiconductor SCT4036DWAHRTL
Brand: ROHM Semiconductor
SKU: 755-SCT4036DWAHRTL
Price: 74.15 DKK
Availability: InStock

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See Product Specifications

Mouser No:

755-SCT4036DWAHRTL

Mfr. No:

SCT4036DWAHRTL

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT4036DWAHRTL Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor SCT4036DWAHRTL

In Stock: 700

Stock:: 700 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	74,15 kr.	74,15 kr.
	52,15 kr.	521,50 kr.
	44,39 kr.	4.439,00 kr.
Full Reel (Order in multiples of 1000)
	37,75 kr.	37.750,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7LA
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	47 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	72 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	115 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	10 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	Power MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	21 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC Power MOSFET
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	6.5 ns

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Datasheet

SCT4036DWAHRTL Datasheet

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USHTS:: 8541100080
ECCN:: EAR99

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.