+45 80253834

Part of the TTI Family of Specialists Contact Mouser (Sweden) +45 80253834 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

SCS212AGC17

Name: ROHM Semiconductor SCS212AGC17
Brand: ROHM Semiconductor
SKU: 755-SCS212AGC17
Price: 41.7 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

755-SCS212AGC17

Mfr. No:

SCS212AGC17

Mfr.:

ROHM Semiconductor

Description:

SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 12A, 2nd Gen

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

SCS212AGC17 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor SCS212AGC17

In Stock: 830

Stock:: 830 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 830 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	41,70 kr.	41,70 kr.
	22,98 kr.	229,80 kr.
	21,04 kr.	2.104,00 kr.
	19,92 kr.	9.960,00 kr.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-220ACG-2
Configuration:	Single
If - Forward Current:	12 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.55 V
Ifsm - Forward Surge Current:	43 A
Ir - Reverse Current:	240 uA
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	ROHM Semiconductor
Pd - Power Dissipation:	93 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	1000
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V
Part # Aliases:	SCS212AG

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SCS212AGC17 Datasheet (PDF)

Specification Sheets

This functionality requires JavaScript to be enabled.

USHTS:: 8541100080
ECCN:: EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (Q_C), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.