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RQ3N025ATTB1

Name: ROHM Semiconductor RQ3N025ATTB1
Brand: ROHM Semiconductor
SKU: 755-RQ3N025ATTB1
Price: 7.98 DKK
Availability: InStock

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Mouser No:

755-RQ3N025ATTB1

Mfr. No:

RQ3N025ATTB1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Pch -80V -2.5A, HSMT8, Power MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RQ3N025ATTB1 Datasheet

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Learn more about ROHM Semiconductor RQ3N025ATTB1

In Stock: 2.320

Stock:: 2.320 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	7,98 kr.	7,98 kr.
	5,01 kr.	50,10 kr.
	3,30 kr.	330,00 kr.
	2,57 kr.	1.285,00 kr.
	2,33 kr.	2.330,00 kr.
Full Reel (Order in multiples of 3000)
	2,03 kr.	6.090,00 kr.
	1,88 kr.	11.280,00 kr.
	1,81 kr.	16.290,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HSMT-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	7 A
Rds On - Drain-Source Resistance:	240 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	13 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	14 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	15 ns
Forward Transconductance - Min:	2.4 S
Product Type:	MOSFETs
Rise Time:	6.4 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	8.6 ns

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Datasheet

RQ3N025ATTB1 Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

RQxAT P-Channel MOSFETs

ROHM Semiconductor RQxAT P-Channel features surface mount packaging with low ON resistance and are 100% Rg and UIS tested. These P-channel MOSFETs offer a gate-source voltage of ±20V. The RQ3N025AT and RQ5L030AT MOSFETs feature a maximum drain-source ON resistance of 240mΩ and 99mΩ, respectively. These P-channel MOSFETs are RoHS compliant and halogen-free. The RQ3N025AT and RQ5L030AT MOSFETs offer a drain-source voltage of -80V and -60V, respectively. These P-channel MOSFETs operate within the -55°C to 150°C temperature range. Typical applications include switching and motor drives.