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PSMN3R9-100YSFX

Name: Nexperia PSMN3R9-100YSFX
Brand: Nexperia
SKU: 771-PSMN3R9-100YSFX
Price: 23.65 DKK
Availability: InStock

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Mouser No:

771-PSMN3R9-100YSFX

Mfr. No:

PSMN3R9-100YSFX

Mfr.:

Nexperia

Description:

MOSFETs SOT1023 100V 120A N-CH

Datasheet:

PSMN3R9-100YSFX Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PSMN3R9-100YSFX

In Stock: 45

Stock:: 45

Can Dispatch Immediately

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On Order:: 3.000

Expected 23/02/2026
Factory Lead Time:: 13

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	23,65 kr.	23,65 kr.
	15,52 kr.	155,20 kr.
	13,95 kr.	697,50 kr.
	10,89 kr.	1.089,00 kr.
	9,62 kr.	4.810,00 kr.
Full Reel (Order in multiples of 1500)
	7,91 kr.	11.865,00 kr.
	7,76 kr.	23.280,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-1023-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	4.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	79 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	245 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Single
Fall Time:	23 ns
Product Type:	MOSFETs
Rise Time:	18 ns
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	22 ns
Part # Aliases:	934660621115
Unit Weight:	93,270 mg

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Datasheet

PSMN3R9-100YSFX Datasheet (PDF)

Application Notes

Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NextPower 80/100V MOSFETs

Nexperia NextPower 80/100V MOSFETs are recommended for high-efficiency switching and high-reliability applications. The NextPower MOSFETs feature 50% lower R_DS(on) and a strong avalanche energy rating. The devices are ideally suited for power supply, telecom, industrial designs, USB-PD Type-C chargers and adapters, and 48V DC-DC adapters. The devices have low body diode losses with Q_rr down to 50 nano-coulombs (nC). This results in lower reverse recovery current (I_RR), lower voltage spikes (V_peak), and reduced ringing for further optimized dead time.