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PMDXB600UNELZ

Name: Nexperia PMDXB600UNELZ
Brand: Nexperia
SKU: 771-PMDXB600UNELZ
Price: 2.25 DKK
Availability: OutOfStock

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See Product Specifications

Mouser No:

771-PMDXB600UNELZ

Mfr. No:

PMDXB600UNELZ

Mfr.:

Nexperia

Description:

MOSFETs SOT1216 2NCH 20V .6A

Datasheet:

PMDXB600UNELZ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PMDXB600UNELZ

Availability

Stock:: 0

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On Order:: 9.200

Expected 08/02/2027
Factory Lead Time:: 8

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,25 kr.	2,25 kr.
	1,36 kr.	13,60 kr.
	0,85 kr.	85,00 kr.
	0,634 kr.	317,00 kr.
	0,50 kr.	500,00 kr.
	0,485 kr.	1.212,50 kr.
Full Reel (Order in multiples of 5000)
	0,41 kr.	2.050,00 kr.
	0,373 kr.	3.730,00 kr.
	0,343 kr.	8.575,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-1010-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	600 mA
Rds On - Drain-Source Resistance:	470 mOhms, 470 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	450 mV
Qg - Gate Charge:	700 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	380 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	51 ns, 51 ns
Forward Transconductance - Min:	1 S, 1 S
Product Type:	MOSFETs
Rise Time:	9.2 ns, 9.2 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	19 ns, 19 ns
Typical Turn-On Delay Time:	5.6 ns, 5.6 ns
Part # Aliases:	934070432147
Unit Weight:	1,217 mg

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Attributes selected: 0

Filter Document:

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

PMDXBx 20V Trench MOSFETs

Nexperia PMDXBx 20V Trench MOSFETs consist of enhancement mode field-effect transistors (FET) in leadless, ultra-small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic packages. The devices employ Trench MOSFET technology, have an exposed drain pad for excellent thermal conduction, provide >1kV HBM ESD protection, and offer 470mΩ drain-source on-state resistance. The PMDXBx MOSFETs are available in dual N- and P-channel versions. The Nexperia PMDXBx 20V Trench MOSFETs are ideal for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

PMDXB600UNEL 20V Dual N-Channel Trench MOSFET

Nexperia PMDXB600UNEL 20V Dual N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) housed in a leadless ultrasmall surface-mounted plastic package. The PMDXB600UNEL features a low leakage current, and an exposed drain pad for excellent thermal conduction. Typical applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.