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NVTFS4C02NTAG

Name: onsemi NVTFS4C02NTAG
Brand: onsemi
SKU: 863-NVTFS4C02NTAG
Price: 15.22 DKK
Availability: InStock

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Mouser No:

863-NVTFS4C02NTAG

Mfr. No:

NVTFS4C02NTAG

Mfr.:

onsemi

Description:

MOSFETs T6 30V NCH U8FL

Datasheet:

NVTFS4C02NTAG Datasheet

ECAD Model:

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In Stock: 1.009

Stock:: 1.009 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	15,22 kr.	15,22 kr.
	10,89 kr.	108,90 kr.
	8,58 kr.	858,00 kr.
	7,12 kr.	3.560,00 kr.
	6,67 kr.	6.670,00 kr.
Full Reel (Order in multiples of 1500)
	6,67 kr.	10.005,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WDFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	162 A
Rds On - Drain-Source Resistance:	2.25 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	3.2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Product Type:	MOSFETs
Series:	NVTFS4C02N
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

NVTFS4C02NTAG Datasheet

Material Composition Disclosure

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are small-footprint and compact MOSFETs with low R_DS(on) and low capacitance. The low R_DS(on) value helps to minimize conduction losses, and low capacitance minimizes driver losses. These single N-channel power MOSFETs are Pb-free and RoHS compliant and feature a -55°C to +175°C operating temperature range.