It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVMYS3D3N06CLTWG

Name: onsemi NVMYS3D3N06CLTWG
Brand: onsemi
SKU: 863-NVMYS3D3N06CLTWG
Price: 13.43 DKK
Availability: Discontinued

Images are for reference only
See Product Specifications

Mouser No:

863-NVMYS3D3N06CLTWG

Mfr. No:

NVMYS3D3N06CLTWG

Mfr.:

onsemi

Description:

MOSFETs 60V 3mOhm 133A Single N-Channel

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

NVMYS3D3N06CLTWG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVMYS3D3N06CLTWG

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 6.000

Expected 17/04/2026
Factory Lead Time:: 19

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	13,43 kr.	13,43 kr.
	8,95 kr.	89,50 kr.
	6,35 kr.	635,00 kr.
	5,23 kr.	2.615,00 kr.
	4,69 kr.	4.690,00 kr.
Full Reel (Order in multiples of 3000)
	4,33 kr.	12.990,00 kr.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	133 A
Rds On - Drain-Source Resistance:	3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	40.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	100 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	96 ns
Forward Transconductance - Min:	130 S
Product Type:	MOSFETs
Rise Time:	58 ns
Series:	NVMYS3D3N06CL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	66 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	75 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVMYS3D3N06CLTWG Datasheet

PCN

Product Change Notification 2024-06-12 (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

LFPAK4 Automotive N-Channel Power MOSFETs

onsemi LFPAK4 Automotive N-Channel Power MOSFETs are AEC-Q101-qualified, single N-channel MOSFETs with a small 5mm x 6mm footprint, ideal for compact designs. These devices feature a low drain-to-source on-resistance to minimize conduction losses and low gate charge and capacitance to minimize driver losses. These automotive-grade power MOSFETs are Pb-free, RoHS-compliant, and feature a wide -55°C to +175°C operating temperature range.