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NVMYS010N04CLTWG

Name: onsemi NVMYS010N04CLTWG
Brand: onsemi
SKU: 863-NVMYS010N04CLTWG
Price: 8.88 DKK
Availability: InStock

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Mouser No:

863-NVMYS010N04CLTWG

Mfr. No:

NVMYS010N04CLTWG

Mfr.:

onsemi

Description:

MOSFETs 40V 10Ohm 38A Single N-Channel

Datasheet:

NVMYS010N04CLTWG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMYS010N04CLTWG

In Stock: 1.501

Stock:: 1.501 Can Dispatch Immediately

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Factory Lead Time:: 32 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	8,88 kr.	8,88 kr.
	5,57 kr.	55,70 kr.
	3,78 kr.	378,00 kr.
	3,19 kr.	1.595,00 kr.
	2,68 kr.	2.680,00 kr.
Full Reel (Order in multiples of 3000)
	2,40 kr.	7.200,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	10.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	7.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	28 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	2 ns
Forward Transconductance - Min:	33 S
Product Type:	MOSFETs
Rise Time:	43 ns
Series:	NVMYS010N04CL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	11 ns
Typical Turn-On Delay Time:	7 ns
Unit Weight:	75 mg

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Datasheet

NVMYS010N04CLTWG Datasheet

PCN

Product Change Notification 2024-06-12 (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

LFPAK4 Automotive N-Channel Power MOSFETs

onsemi LFPAK4 Automotive N-Channel Power MOSFETs are AEC-Q101-qualified, single N-channel MOSFETs with a small 5mm x 6mm footprint, ideal for compact designs. These devices feature a low drain-to-source on-resistance to minimize conduction losses and low gate charge and capacitance to minimize driver losses. These automotive-grade power MOSFETs are Pb-free, RoHS-compliant, and feature a wide -55°C to +175°C operating temperature range.