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NVD5C668NLT4G

Name: onsemi NVD5C668NLT4G
Brand: onsemi
SKU: 863-NVD5C668NLT4G
Price: 17.61 DKK
Availability: InStock

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See Product Specifications

Mouser No:

863-NVD5C668NLT4G

Mfr. No:

NVD5C668NLT4G

Mfr.:

onsemi

Description:

MOSFETs T6 60V LL DPAK

Datasheet:

NVD5C668NLT4G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVD5C668NLT4G

In Stock: 104

Stock:: 104

Can Dispatch Immediately

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On Order:: 2.500

Expected 28/08/2026
Factory Lead Time:: 44

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	17,61 kr.	17,61 kr.
	11,34 kr.	113,40 kr.
	8,06 kr.	806,00 kr.
	6,80 kr.	3.400,00 kr.
	6,28 kr.	6.280,00 kr.
Full Reel (Order in multiples of 2500)
	5,86 kr.	14.650,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	49 A
Rds On - Drain-Source Resistance:	7.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	18.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	44 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	62 ns
Forward Transconductance - Min:	60 S
Product Type:	MOSFETs
Rise Time:	74 ns
Series:	NVD5C668NL
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	330 mg

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Datasheet

NVD5C668NLT4G Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

NVD5C Power MOSFETs

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