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NVD5C478NLT4G

Name: onsemi NVD5C478NLT4G
Brand: onsemi
SKU: 863-NVD5C478NLT4G
Price: 15.67 DKK
Availability: InStock

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Mouser No:

863-NVD5C478NLT4G

Mfr. No:

NVD5C478NLT4G

Mfr.:

onsemi

Description:

MOSFETs T6 40V DPAK EXP

Datasheet:

NVD5C478NLT4G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVD5C478NLT4G

In Stock: 1.675

Stock:: 1.675 Can Dispatch Immediately

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Factory Lead Time:: 28 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	15,67 kr.	15,67 kr.
	10,15 kr.	101,50 kr.
	6,93 kr.	693,00 kr.
	5,52 kr.	2.760,00 kr.
	5,28 kr.	5.280,00 kr.
Full Reel (Order in multiples of 2500)
	5,07 kr.	12.675,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	45 A
Rds On - Drain-Source Resistance:	7.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	30 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	3 ns
Forward Transconductance - Min:	45 S
Product Type:	MOSFETs
Rise Time:	16 ns
Series:	NVD5C478NL
Factory Pack Quantity:	2500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	7 ns
Unit Weight:	360 mg

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Datasheet

NVD5C478NLT4G Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 85412999
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

NVD5C Power MOSFETs

onsemi NVD5C Power MOSFETs are AEC-Q101 Qualified and offer robust solutions for automotive applications. NVD5C Power MOSFETs offer Low R_DS(on) to minimize conduction losses and low Q_G and Capacitance to minimize driver losses. These onsemi single N-Channel MOSFETs are housed in a compact, surface-mount DPAK package and are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.