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NTTFS3D7N06HLTWG

Name: onsemi NTTFS3D7N06HLTWG
Brand: onsemi
SKU: 863-NTTFS3D7N06HLTWG
Price: 17.61 DKK
Availability: InStock

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Mouser No:

863-NTTFS3D7N06HLTWG

Mfr. No:

NTTFS3D7N06HLTWG

Mfr.:

onsemi

Description:

MOSFETs T8 60V DFN POWER CLIP 3X3

Datasheet:

NTTFS3D7N06HLTWG Datasheet

ECAD Model:

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In Stock: 2.160

Stock:: 2.160 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	17,61 kr.	17,61 kr.
	11,19 kr.	111,90 kr.
	7,83 kr.	783,00 kr.
	6,35 kr.	3.175,00 kr.
	5,93 kr.	5.930,00 kr.
Full Reel (Order in multiples of 3000)
	5,93 kr.	17.790,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PQFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	103 A
Rds On - Drain-Source Resistance:	3.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	32.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Product Type:	MOSFETs
Series:	NTTFS3D7N06HL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	122,136 mg

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Datasheet

NTTFS3D7N06HLTWG Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).

NTTFSxD1N0xHL N-Channel PowerTrench® MOSFETs

onsemi NTTFSxD1N0xHL N-Channel PowerTrench® MOSFETs employ high-performance Shielded Gate MOSFET technology for extremely low R_DS(on). These onsemi single-channel MOSFETs offer low switching noises/EMI and 100% UIL-tested MSL1 robust package design. The NTTFSxD1N0xHL MOSFETs are available in a lead-free, halogen-free/BFR-free, and RoHS compliant WDFN8 package. Typical applications include DC−DC buck converters, point of load, high-efficiency load switch and low-side switching, ORing FETs, DC-DC power supplies, and MV synchronous buck converters.