NTMFS0D6N04XMT1G

onsemi
863-NTMFS0D6N04XMT1G
NTMFS0D6N04XMT1G

Mfr.:

Description:
MOSFETs 40V T10M IN S08FL HEFET GEN 2 PACKAGE

ECAD Model:
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In Stock: 4.016

Stock:
4.016
Can Dispatch Immediately
On Order:
1.500
Expected 03/04/2026
Factory Lead Time:
34
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1500)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
19,17 kr. 19,17 kr.
12,53 kr. 125,30 kr.
8,65 kr. 865,00 kr.
7,18 kr. 3.590,00 kr.
6,16 kr. 6.160,00 kr.
Full Reel (Order in multiples of 1500)
6,10 kr. 9.150,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DFN-5
N-Channel
1 Channel
40 V
380 A
570 uOhms
- 20 V, 20 V
3.5 V
86.4 nC
- 55 C
+ 175 C
150 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: onsemi
Configuration: Single
Fall Time: 15.3 ns
Forward Transconductance - Min: 175 S
Product Type: MOSFETs
Rise Time: 15.6 ns
Series: NTMFS0D6N04XM
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 58.2 ns
Typical Turn-On Delay Time: 33.9 ns
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

40V Power MOSFETs

onsemi 40V Power MOSFETs feature standard gate-level technology and boast best-in-class on-resistance. The onsemi MOSFETs are designed for motor driver applications. The devices effectively minimize conduction and driving losses with lower on-resistance and reduced gate charge. Additionally, the MOSFETs provide excellent softness control for body diode reverse recovery, effectively mitigating voltage spike stress without needing an extra snubber circuit in applications.