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NTMFS0D6N03CT1G

Name: onsemi NTMFS0D6N03CT1G
Brand: onsemi
SKU: 863-NTMFS0D6N03CT1G
Price: 18.35 DKK
Availability: InStock

Mouser No:

863-NTMFS0D6N03CT1G

Mfr. No:

NTMFS0D6N03CT1G

Mfr.:

onsemi

Description:

MOSFETs LFPAK WIDE SOA AND SO8FL EXPANSION

Datasheet:

NTMFS0D6N03CT1G Datasheet

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In Stock: 4.334

Stock:: 4.334 Can Dispatch Immediately

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Factory Lead Time:: 37 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	18,35 kr.	18,35 kr.
	11,94 kr.	119,40 kr.
	8,21 kr.	821,00 kr.
	6,80 kr.	3.400,00 kr.
	6,48 kr.	6.480,00 kr.
Full Reel (Order in multiples of 1500)
	5,84 kr.	8.760,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	433 A
Rds On - Drain-Source Resistance:	620 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	65 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	200 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTMFS0D6N03C
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

NTMFS0D6N03CT1G Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are small-footprint and compact MOSFETs with low R_DS(on) and low capacitance. The low R_DS(on) value helps to minimize conduction losses, and low capacitance minimizes driver losses. These single N-channel power MOSFETs are Pb-free and RoHS compliant and feature a -55°C to +175°C operating temperature range.

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.