MWT-LN300

CML Micro
938-MWT-LN300
MWT-LN300

Mfr.:

Description:
RF MOSFET Transistors Low Noise pHEMT Devices

Datasheet:
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Learn more about CML Micro MWT-LN300

In Stock: 50

Stock:
50 Can Dispatch Immediately
Quantities greater than 50 will be subject to minimum order requirements.
Minimum: 10   Multiples: 10
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 10)
206,64 kr. 2.066,40 kr.

Product Attribute Attribute Value Select Attribute
CML Micro
Product Category: RF MOSFET Transistors
GaAs
120 mA
4 V
26 GHz
10 dB, 13 dB
16 dBm
+ 150 C
Die
Reel
Brand: CML Micro
Forward Transconductance - Min: 160 mS
Pd - Power Dissipation: 300 mW
Product Type: RF MOSFET Transistors
Series: MWT
Factory Pack Quantity: 10
Subcategory: MOSFETs
Tradename: MWT-LN300
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Attributes selected: 0

Datasheet

Other

TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
MXHTS:
8541210100
ECCN:
EAR99

GaAs FET & pHEMT Devices

MicroWave Technology GaAs FET and pHEMT Devices are ultra-linear, high-dynamic range, and low-phase noise devices that include commercial, industrial, military, and space-grade variants. The GaAs process employed by MicroWave Technology is approved for space applications with proven reliability. These devices come with standard and custom device specifications with high-rel and space-rel screening options availability. The GaAs FET and pHEMT devices are RoHS (lead-free) compliant and offer 100% wafer bond pull, die shear, wafer DC burn-in, and bake tests in evaluation per MIL-PRF-38534. These devices are typically suitable for oscillators, narrow-band, wideband applications, space, and military applications.

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