MASTERGAN4

STMicroelectronics
511-MASTERGAN4
MASTERGAN4

Mfr.:

Description:
Gate Drivers High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
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Datasheet:
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In Stock: 115

Stock:
115 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 115 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
73,03 kr. 73,03 kr.
56,17 kr. 561,70 kr.
52,52 kr. 1.313,00 kr.
47,67 kr. 4.767,00 kr.
45,51 kr. 11.377,50 kr.
43,72 kr. 21.860,00 kr.
40,36 kr. 40.360,00 kr.
2.500 Quote

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
Half-Bridge
SMD/SMT
QFN-31
2 Driver
3 Output
6.5 A
3.3 V
15 V
- 40 C
+ 125 C
MASTERGAN
Tray
Brand: STMicroelectronics
Features: 600 V System-in-Package Integrating Half-Bridge Gate Driver
Input Voltage - Max: 15 V
Input Voltage - Min: 3.3 V
Moisture Sensitive: Yes
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 225 mOhms
Factory Pack Quantity: 1560
Subcategory: PMIC - Power Management ICs
Unit Weight: 150 mg
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Attributes selected: 0

Datasheet

PCN

CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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