MASTERGAN2

STMicroelectronics
511-MASTERGAN2
MASTERGAN2

Mfr.:

Description:
Gate Drivers High power density 600V Half bridge driver with two enhancement mode GaN HEMTs
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Datasheet:
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In Stock: 172

Stock:
172 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
64,75 kr. 64,75 kr.
50,28 kr. 502,80 kr.
46,70 kr. 1.167,50 kr.
42,82 kr. 4.282,00 kr.
40,58 kr. 10.145,00 kr.
39,76 kr. 19.880,00 kr.
38,79 kr. 38.790,00 kr.
2.500 Quote

Alternative Packaging

Mfr. Part No.:
MASTERGAN2TR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
43,12 kr.
Min:
1

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
2 Driver
1 Output
10 A
3.3 V
15 V
- 40 C
+ 125 C
MASTERGAN
Tray
Brand: STMicroelectronics
Moisture Sensitive: Yes
Product Type: Gate Drivers
Factory Pack Quantity: 1560
Subcategory: PMIC - Power Management ICs
Unit Weight: 150 mg
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Attributes selected: 0

Compliance Codes
CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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