KTDM4G4B826BGCEAT

SMARTsemi
473-M4G4B826BGCEAT
KTDM4G4B826BGCEAT

Mfr.:

Description:
DRAM DRAM DDR4 4GB 512MX8 2666Mbps 1.2V 78-FBGA Commercial

Datasheet:
ECAD Model:
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More Information
Learn more about SMARTsemi KTDM4G4B826BGCEAT

In Stock: 198

Stock:
198 Can Dispatch Immediately
Quantities greater than 198 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
64,45 kr. 64,45 kr.
60,87 kr. 608,70 kr.
53,41 kr. 11.216,10 kr.
52,00 kr. 21.840,00 kr.
51,70 kr. 54.285,00 kr.
2.520 Quote

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR4
4 Gbit
8 bit
1.333 GHz
FBGA-78
512 M x 8
1.14 V
1.26 V
0 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 210
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR4 Memory ICs

SMARTsemi DDR4 Memory ICs feature a power supply (JEDEC standard 1.2V) of VDD = 1.2V ± 5%, and VPP = 2.375V to 2.75V. The ICs have up to 8 banks (4 banks x 2 bank groups) for x 16 products. The DDR4 feature a Pseudo Open Drain (POD) interface with a Burst Length (BL) of 8 and 4 with Burst Chop (BC).

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