KTDM4G4B626BGCEAT

SMARTsemi
473-M4G4B626BGCEAT
KTDM4G4B626BGCEAT

Mfr.:

Description:
DRAM DRAM DDR4 4GB 256MX16 2666Mbps 1.2V 96-FBGA Commercial

Datasheet:
ECAD Model:
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More Information
Learn more about SMARTsemi KTDM4G4B626BGCEAT

In Stock: 84

Stock:
84 Can Dispatch Immediately
Factory Lead Time:
39 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
70,05 kr. 70,05 kr.
65,13 kr. 651,30 kr.
63,11 kr. 1.577,75 kr.
61,62 kr. 3.081,00 kr.
60,13 kr. 6.013,00 kr.
58,19 kr. 11.521,62 kr.
56,70 kr. 33.679,80 kr.
55,20 kr. 65.577,60 kr.
2.574 Quote

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR4
4 Gbit
16 bit
1.333 GHz
FBGA-96
256 M x 16
1.14 V
1.26 V
0 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 198
Subcategory: Memory & Data Storage
Products found:
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR4 Memory ICs

SMARTsemi DDR4 Memory ICs feature a power supply (JEDEC standard 1.2V) of VDD = 1.2V ± 5%, and VPP = 2.375V to 2.75V. The ICs have up to 8 banks (4 banks x 2 bank groups) for x 16 products. The DDR4 feature a Pseudo Open Drain (POD) interface with a Burst Length (BL) of 8 and 4 with Burst Chop (BC).

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