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IXSH40N65L2KHV

Name: IXYS IXSH40N65L2KHV
Brand: IXYS
SKU: 747-IXSH40N65L2KHV
Price: 48.19 DKK
Availability: InStock

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Mouser No:

747-IXSH40N65L2KHV

Mfr. No:

IXSH40N65L2KHV

Mfr.:

IXYS

Description:

SiC MOSFETs SiC MOSFET in TO247-4L HV

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXSH40N65L2KHV Datasheet (PDF)

ECAD Model:

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Learn more about IXYS IXSH40N65L2KHV

In Stock: 550

Stock:: 550 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	48,19 kr.	48,19 kr.
	34,02 kr.	340,20 kr.
	28,35 kr.	2.835,00 kr.
	25,21 kr.	11.344,50 kr.
	22,45 kr.	20.205,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	43 A
Rds On - Drain-Source Resistance:	78 mOhms
Vgs - Gate-Source Voltage:	- 5 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	64 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	174 W
Channel Mode:	Enhancement
Brand:	IXYS
Configuration:	Single
Fall Time:	9 ns
Packaging:	Tube
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	12.7 ns
Series:	IXSxNxL2Kx
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	22.6 ns
Typical Turn-On Delay Time:	5.3 ns

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Datasheet

IXSH40N65L2KHV Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [R_DS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (I_D) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (V_DSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).