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IXSH20N120L2KHV

Name: IXYS IXSH20N120L2KHV
Brand: IXYS
SKU: 747-IXSH20N120L2KHV
Price: 37.82 DKK
Availability: InStock

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See Product Specifications

Mouser No:

747-IXSH20N120L2KHV

Mfr. No:

IXSH20N120L2KHV

Mfr.:

IXYS

Description:

SiC MOSFETs SiC MOSFET in TO247-4L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXSH20N120L2KHV Datasheet (PDF)

ECAD Model:

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More Information

Learn more about IXYS IXSH20N120L2KHV

In Stock: 550

Stock:: 550 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	37,82 kr.	37,82 kr.
	28,57 kr.	285,70 kr.
	23,13 kr.	2.313,00 kr.
Full Reel (Order in multiples of 450)
	20,44 kr.	9.198,00 kr.
	17,53 kr.	15.777,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	208 mOhms
Vgs - Gate-Source Voltage:	- 5 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	136 W
Channel Mode:	Enhancement
Brand:	IXYS
Configuration:	Single
Fall Time:	10.4 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	10.8 ns
Series:	IXSxNxL2Kx
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	8.4 ns
Typical Turn-On Delay Time:	2.8 ns

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Datasheet

IXSH20N120L2KHV Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [R_DS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (I_D) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (V_DSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).