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ISC024N08NM7ATMA1

Name: Infineon ISC024N08NM7ATMA1
Brand: Infineon Technologies
SKU: 726-ISC024N08NM7ATMA
Price: 21.71 DKK
Availability: InStock

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Mouser No:

726-ISC024N08NM7ATMA

Mfr. No:

ISC024N08NM7ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 PowerTransistor, 80 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISC024N08NM7ATMA1 Datasheet (PDF)

ECAD Model:

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More Information

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In Stock: 2.098

Stock:: 2.098

Can Dispatch Immediately

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On Order:: 10.000

Expected 30/07/2026
Factory Lead Time:: 53

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	21,71 kr.	21,71 kr.
	14,02 kr.	140,20 kr.
	10,29 kr.	1.029,00 kr.
	8,65 kr.	4.325,00 kr.
	8,06 kr.	8.060,00 kr.
	7,53 kr.	18.825,00 kr.
Full Reel (Order in multiples of 5000)
	7,53 kr.	37.650,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	167 A
Rds On - Drain-Source Resistance:	2.4 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	49 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	130 S
Product Type:	MOSFETs
Rise Time:	3.8 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20.4 ns
Typical Turn-On Delay Time:	10.3 ns
Part # Aliases:	ISC024N08NM7 SP006183896

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Datasheet

ISC024N08NM7ATMA1 Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: China
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

N-Channel OptiMOS™ 7 80V Power MOSFETs

Infineon Technologies N-channel OptiMOS™ 7 80V Power MOSFETs are N-channel, normal level devices with superior thermal resistance. The OptiMOS 7 80V Power MOSFET series offers a soft-recovery body diode and is rated to 175°C. The Infineon OptiMOS 7 80V Power MOSFETs are available in a PG‑TDSON‑8 package and are optimized for motor drives and synchronous rectification applications.

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOM_oss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.