ISC019N08NM7ATMA1

Infineon Technologies
726-ISC019N08NM7ATMA
ISC019N08NM7ATMA1

Mfr.:

Description:
MOSFETs OptiMOS 7 n-channel power MOSFET 80 V in SuperSO8

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Infineon Technologies ISC019N08NM7ATMA1

In Stock: 5.460

Stock:
5.460 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
23,80 kr. 23,80 kr.
15,59 kr. 155,90 kr.
10,89 kr. 1.089,00 kr.
9,92 kr. 4.960,00 kr.
Full Reel (Order in multiples of 5000)
9,92 kr. 49.600,00 kr.
8,13 kr. 81.300,00 kr.

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PG-TDSON-8
N-Channel
1 Channel
80 V
209 A
1.9 mOhms
20 V
3.2 V
60 nC
- 55 C
+ 175 C
188 W
Enhancement
OptiMOS
Reel
Cut Tape
Brand: Infineon Technologies
Configuration: Single
Fall Time: 7.5 ns
Forward Transconductance - Min: 70 S
Product Type: MOSFETs
Rise Time: 5.3 ns
Series: OptiMOS 7
Factory Pack Quantity: 5000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 28 ns
Typical Turn-On Delay Time: 11 ns
Part # Aliases: ISC019N08NM7 SP006166279
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOMoss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.

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