IS66WVE2M16EALL-70BLI

ISSI
870-E2M16EALL70BLI
IS66WVE2M16EALL-70BLI

Mfr.:

Description:
SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS

ECAD Model:
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In Stock: 310

Stock:
310 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 200
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
41,48 kr. 41,48 kr.
38,64 kr. 386,40 kr.
37,45 kr. 936,25 kr.
36,55 kr. 1.827,50 kr.
35,73 kr. 3.573,00 kr.

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: SRAM
RoHS:  
32 Mbit
2 M x 16
70 ns
Parallel
1.95 V
1.7 V
30 mA
- 40 C
+ 85 C
SMD/SMT
Brand: ISSI
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Product Type: SRAM
Series: IS66WVE2M16EALL
Factory Pack Quantity: 480
Subcategory: Memory & Data Storage
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TARIC:
8542324500
CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
854232029
KRHTS:
8542321020
MXHTS:
8542320201
ECCN:
EAR99

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.