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IPTC068N20NM6ATMA1

Name: Infineon IPTC068N20NM6ATMA1
Brand: Infineon Technologies
SKU: 726-IPTC068N20NM6ATM
Price: 45.73 DKK
Availability: InStock

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Mouser No:

726-IPTC068N20NM6ATM

Mfr. No:

IPTC068N20NM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 6 Power-Transistor, 200 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IPTC068N20NM6ATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IPTC068N20NM6ATMA1

In Stock: 4.681

Stock:: 4.681 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	45,73 kr.	45,73 kr.
	38,34 kr.	383,40 kr.
	32,00 kr.	3.200,00 kr.
	28,20 kr.	14.100,00 kr.
	24,25 kr.	24.250,00 kr.
Full Reel (Order in multiples of 1800)
	24,25 kr.	43.650,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	140 A
Rds On - Drain-Source Resistance:	6.8 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	71 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	319 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	9 ns
Forward Transconductance - Min:	33 S
Product Type:	MOSFETs
Rise Time:	15 ns
Factory Pack Quantity:	1800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	19 ns
Part # Aliases:	IPTC068N20NM6 SP006063004

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Datasheet

IPTC068N20NM6ATMA1 Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.

OptiMOS™ 6 200V Power MOSFETs

Infineon Technologies OptiMOS™ 6 200V Power MOSFETs are N-channel normal level MOSFETs available in PG-TO263-3, PG-TO220-3, and PG-HDSOP-16 packages. These MOSFETs feature excellent gate charge x R_DS(on) product (FOM), very low reverse recovery charge (Q_rr), and low on‑resistance R_DS(on). The OptiMOS™ 6 200V MOSFETs operate at 175°C temperature. These MOSFETs are halogen‑free according to IEC61249‑2‑21 and Moisture Sensitivity Level (MSL 1) classified according to J‑STD-020 standards. The OptiMOS™ 6 200V MOSFETs are ideal for renewables, motor control, audio amplifiers, and industrial applications.