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IPI086N10N3 G

Name: Infineon IPI086N10N3 G
Brand: Infineon Technologies
SKU: 726-IPI086N10N3G
Price: 14.47 DKK
Availability: OutOfStock

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Mouser No:

726-IPI086N10N3G

Mfr. No:

IPI086N10N3 G

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 100V 80A I2PAK-3 OptiMOS 3

Datasheet:

IPI086N10N3 G Datasheet (PDF)

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Stock:: 0

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On Order:: 2.000

Expected 05/03/2026
Factory Lead Time:: 8

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	14,47 kr.	14,47 kr.
	7,06 kr.	70,60 kr.
	6,19 kr.	619,00 kr.
	4,85 kr.	2.425,00 kr.
	4,17 kr.	4.170,00 kr.
	4,16 kr.	20.800,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-262-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	8.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Qg - Gate Charge:	55 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	8 ns
Product Type:	MOSFETs
Rise Time:	42 ns
Series:	OptiMOS 3
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	18 ns
Part # Aliases:	SP000683070 IPI86N1N3GXK IPI086N10N3GXKSA1
Unit Weight:	2,387 g

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Datasheet

IPI086N10N3 G Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

IRF540N/Z Advanced HEXFET® Power MOSFETs

Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.