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IAUCN08S7L018ATMA1

Name: Infineon IAUCN08S7L018ATMA1
Brand: Infineon Technologies
SKU: 726-IAUCN08S7L018ATM
Price: 21.04 DKK
Availability: InStock

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Mouser No:

726-IAUCN08S7L018ATM

Mfr. No:

IAUCN08S7L018ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 Power-Transistor

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IAUCN08S7L018ATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IAUCN08S7L018ATMA1

In Stock: 3.800

Stock:: 3.800 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	21,04 kr.	21,04 kr.
	13,73 kr.	137,30 kr.
	10,44 kr.	1.044,00 kr.
	8,80 kr.	4.400,00 kr.
	7,53 kr.	7.530,00 kr.
	7,12 kr.	17.800,00 kr.
Full Reel (Order in multiples of 5000)
	6,94 kr.	34.700,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	210 A
Rds On - Drain-Source Resistance:	1.8 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	79.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	169 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	25 ns
Product Type:	MOSFETs
Rise Time:	11 ns
Series:	OptiMOS 7
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	58.5 ns
Typical Turn-On Delay Time:	9.4 ns
Part # Aliases:	IAUCN08S7L018 SP006059903

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Datasheet

IAUCN08S7L018ATMA1 Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 7 Automotive Power MOSFETs

Infineon Technologies is introducing its leading OptiMOS™ 7 Automotive Power MOSFETs technology with remarkably low on-state resistance, reduced switching losses, and enhanced ruggedness. OptiMOS 7 redefines the landscape of automotive power MOSFETs. The OptiMOS 7 MOSFET technology from Infineon establishes a new standard for automotive applications, allowing performance and efficiency while addressing the challenges of tomorrow's automotive systems.

OptiMOS™ 7 80V Automotive Power MOSFETs

Infineon Technologies OptiMOS™ 7 80V Automotive Power MOSFETs are built with Infineon’s leading-edge, power semiconductor technology. These MOSFETs are designed specifically for the high performance, quality, and robustness needed for demanding automotive applications. The OptiMOS™ 7 80V MOSFETs operate with a ±20V_GS gate source voltage and a temperature range of -55°C to 175°C. These MOSFETs are offered in top-side cooled SSO10T 5x7mm2 SMD package. The SSO10T package helps users achieve advancements in cooling and power density. The 80V power MOSFETs are MSL-1 rated, RoHS compliant, and 100% avalanche tested. These power MOSFETs are ideal for general automotive applications.