GCMX005A120B3B1P

SemiQ
148-GCMX005A120B3B1P
GCMX005A120B3B1P

Mfr.:

Description:
MOSFET Modules SiC 1200V 5mohm MOSFET Half-Bridge Module

Datasheet:
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Learn more about SemiQ GCMX005A120B3B1P

In Stock: 34

Stock:
34 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
852,16 kr. 852,16 kr.
743,24 kr. 7.432,40 kr.
714,30 kr. 71.430,00 kr.
Full Reel (Order in multiples of 40)
743,24 kr. 29.729,60 kr.
500 Quote

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
N-Channel
1.2 kV
383 A
4.4 mOhms
- 5 V, + 20 V
1.8 V
- 40 C
+ 175 C
1.154 kW
GCMX
Reel
Cut Tape
Brand: SemiQ
Fall Time: 29 ns
Product Type: MOSFET Modules
Rise Time: 22 ns
Factory Pack Quantity: 40
Subcategory: Discrete and Power Modules
Type: Half-Bridge
Typical Turn-Off Delay Time: 114 ns
Typical Turn-On Delay Time: 51 ns
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GCMX 1200V SiC MOSFET Half-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The standout feature of these modules is the robust 1200V drain-source voltage. The GCMX half-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.

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