+45 80253834

Part of the TTI Family of Specialists Contact Mouser (Sweden) +45 80253834 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

GCMS080B120S1-E1

Name: SemiQ GCMS080B120S1-E1
Brand: SemiQ
SKU: 148-GCMS080B120S1-E1
Price: 143.16 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

148-GCMS080B120S1-E1

Mfr. No:

GCMS080B120S1-E1

Mfr.:

SemiQ

Description:

Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227

Datasheet:

GCMS080B120S1-E1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about SemiQ GCMS080B120S1-E1

In Stock: 599

Stock:: 599 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	143,16 kr.	143,16 kr.
	103,84 kr.	1.038,40 kr.
	100,86 kr.	10.086,00 kr.
	87,36 kr.	87.360,00 kr.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	Discrete Semiconductor Modules
RoHS:
REACH - SVHC:
Product:	MOSFET-SiC SBD Modules
Type:	COPACK Power Module
Technology:	SiC
Vf - Forward Voltage:	1.5 V
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	SemiQ
Configuration:	Single
Fall Time:	14 ns
Id - Continuous Drain Current:	30 A
Pd - Power Dissipation:	142 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	77 mOhms
Rise Time:	4 ns
Factory Pack Quantity:	10
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	9 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	2 V

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GCMS080B120S1-E1 Datasheet (PDF)

TARIC:: 8541100000
CNHTS:: 8541290000
CAHTS:: 8541100090
USHTS:: 8541100080
ECCN:: EAR99

SiC MOSFET Power Modules

SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.