FP35R12N2T7BPSA2

Infineon Technologies
726-FP35R12N2T7BPSA2
FP35R12N2T7BPSA2

Mfr.:

Description:
IGBT Modules 1200 V, 35 A PIM IGBT module

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Infineon Technologies FP35R12N2T7BPSA2

In Stock: 15

Stock:
15 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
419,92 kr. 419,92 kr.
364,35 kr. 3.643,50 kr.
330,78 kr. 34.731,90 kr.

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBT Modules
RoHS:  
IGBT Silicon Modules
3-Phase Inverter
1.2 kV
1.6 V
35 A
100 nA
- 40 C
+ 175 C
Tray
Brand: Infineon Technologies
Product Type: IGBT Modules
Factory Pack Quantity: 15
Subcategory: IGBTs
Technology: Si
Part # Aliases: FP35R12N2T7 SP005597311 FP35R12N2T7BPSA1
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

TARIC:
8541210000
CNHTS:
8504409100
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
MXHTS:
8541210100
ECCN:
EAR99

1200V PIM IGBT Modules

Infineon 1200V PIM IGBT Modules offer TRENCHSTOP™ IGBT7 and EC7 diode technology based on the latest micro-pattern trenches technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V PIM IGBT Modules.

1200V PIM 3 Phase Input Rectifiers

Infineon Technologies 1200V PIM 3 Phase Input Rectifiers are EconoPIM™ 2 1200V, 100A three-phase PIM IGBT modules. The rectifiers feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with the integration of rectifier and brake chopper enables system cost savings. 

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.