FM25V10-GTR

Infineon Technologies
877-FM25V10-GTR
FM25V10-GTR

Mfr.:

Description:
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM

Datasheet:
ECAD Model:
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More Information
Learn more about Infineon Technologies FM25V10-GTR

In Stock: 9.186

Stock:
9.186 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
93,92 kr. 93,92 kr.
87,21 kr. 872,10 kr.
84,45 kr. 2.111,25 kr.
82,43 kr. 4.121,50 kr.
80,42 kr. 8.042,00 kr.
77,73 kr. 19.432,50 kr.
76,32 kr. 38.160,00 kr.
76,24 kr. 76.240,00 kr.
Full Reel (Order in multiples of 2500)
72,29 kr. 180.725,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
FM25V10-G
Packaging:
Tube
Availability:
In Stock
Price:
92,35 kr.
Min:
1

Similar Product

Infineon Technologies FM25V10-G
Infineon Technologies
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
1 Mbit
SPI
25 MHz, 40 MHz
128 k x 8
SOIC-8
2 V
3.6 V
- 40 C
+ 85 C
FM25V10-G
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 2 V to 3.6 V
Product Type: FRAM
Factory Pack Quantity: 2500
Subcategory: Memory & Data Storage
Unit Weight: 540 mg
Products found:
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Attributes selected: 0

Datasheet

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TARIC:
8542329000
CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.

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