FM25V05-GTR

Infineon Technologies
877-FM25V05-GTR
FM25V05-GTR

Mfr.:

Description:
F-RAM 512K (64KX8) 3.3V F-RAM

ECAD Model:
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In Stock: 1.497

Stock:
1.497 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
66,69 kr. 66,69 kr.
61,99 kr. 619,90 kr.
60,13 kr. 1.503,25 kr.
58,64 kr. 2.932,00 kr.
57,22 kr. 5.722,00 kr.
55,35 kr. 13.837,50 kr.
54,31 kr. 27.155,00 kr.
52,97 kr. 52.970,00 kr.
Full Reel (Order in multiples of 2500)
49,68 kr. 124.200,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Tube
Availability:
In Stock
Price:
63,86 kr.
Min:
1

Similar Product

Infineon Technologies FM25V05-G
Infineon Technologies
F-RAM 512K (64KX8) 3.3V F-RAM

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
512 kbit
SPI
25 MHz, 40 MHz
64 k x 8
SOIC-8
2 V
3.6 V
- 40 C
+ 85 C
FM25V05-G
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 3.3 V
Product Type: FRAM
Factory Pack Quantity: 2500
Subcategory: Memory & Data Storage
Unit Weight: 540 mg
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Attributes selected: 0

TARIC:
8542329000
CNHTS:
8542329000
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.