FM24V10-G

Infineon Technologies
877-FM24V10-G
FM24V10-G

Mfr.:

Description:
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM

Datasheet:
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Learn more about Infineon Technologies FM24V10-G

In Stock: 1.165

Stock:
1.165 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
114,81 kr. 114,81 kr.
105,48 kr. 1.054,80 kr.
102,35 kr. 2.558,75 kr.
94,07 kr. 4.703,50 kr.
72,36 kr. 35.094,60 kr.

Alternative Packaging

Mfr. Part No.:
FM24V10-GTR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
120,33 kr.
Min:
1

Similar Product

Infineon Technologies FM24V10-GTR
Infineon Technologies
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
1 Mbit
I2C
3.4 MHz
128 k x 8
SOIC-8
2 V
3.6 V
- 40 C
+ 85 C
FM24V10-G
Tube
Brand: Infineon Technologies
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 3.3 V
Product Type: FRAM
Factory Pack Quantity: 485
Subcategory: Memory & Data Storage
Unit Weight: 540 mg
Products found:
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Attributes selected: 0

Datasheet

TARIC:
8542329000
CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99

WICED IOT Platform

Infineon Technologies WICED IoT Platform is a portfolio of wireless technologies ranging from Wi-Fi® and BLUETOOTH® to microcontrollers (MCU) built specifically for the IoT. These design-ready, secure products streamline and simplify designs. Infineon has over 20 ecosystem partners working to crack persistent design problems.  

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.

Serial FRAM Nonvolatile Memory Devices

Infineon Technologies Serial F-RAM (ferroelectric RAM) memories combine the nonvolatile data storage capability of ROM with the fast speeds of RAM. Serial F-RAM features a variety of interface and density options, including SPI and I2C interfaces, industry-standard packages, and densities ranging from 4KB to 4MB. Infineon Serial F-RAMs have three distinct advantages over other nonvolatile memory technologies: fast write speed, extremely high endurance, and low power consumption. Serial F-RAMs provide 100 trillion cycle endurance, exceeding the 1 million write cycle limitation of EEPROM. This eliminates the need for wear leveling to support a product over its lifespan. 

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