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FFSB0865B-F085

Name: onsemi FFSB0865B-F085
Brand: onsemi
SKU: 863-FFSB0865B-F085
Price: 32.6 DKK
Availability: InStock

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Mouser No:

863-FFSB0865B-F085

Mfr. No:

FFSB0865B-F085

Mfr.:

onsemi

Description:

SiC Schottky Diodes 650V 8A SIC SBD GEN1.5

Datasheet:

FFSB0865B-F085 Datasheet

ECAD Model:

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More Information

Learn more about onsemi FFSB0865B-F085

In Stock: 867

Stock:: 867 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	32,60 kr.	32,60 kr.
	21,71 kr.	217,10 kr.
	15,44 kr.	1.544,00 kr.
	13,80 kr.	6.900,00 kr.
Full Reel (Order in multiples of 800)
	12,53 kr.	10.024,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-2
Configuration:	Single
If - Forward Current:	8 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.39 V
Ifsm - Forward Surge Current:	56 A
Ir - Reverse Current:	500 nA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSB0865B-F085
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Pd - Power Dissipation:	73 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	800
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	650 V
Unit Weight:	2,240 g

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Datasheet

FFSB0865B-F085 Datasheet

PCN

ON Semiconductor MPN Label Format Change (PDF)

Material Composition Disclosure

CNHTS:: 8541100000
USHTS:: 8541100080
ECCN:: EAR99

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

FFSx0865B-F085 650V SiC Schottky Diodes

onsemi FFSx0865B-F085 650V 8A Silicon Carbide Schottky Diodes use a technology that provides superior switching performance and higher reliability. onsemi FFSx0865B-F085 SiC Diodes feature temperature-independent switching characteristics, no reverse recovery current, and excellent thermal performance. Additional benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, reduced system size, and increased cost-effectiveness. The FFSx0865B-F085 650V, 8A SiC Schottky Diodes are available in a D2PAK-3 package.