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FDMS86180

Name: onsemi FDMS86180
Brand: onsemi
SKU: 512-FDMS86180
Price: 37.52 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

512-FDMS86180

Mfr. No:

FDMS86180

Mfr.:

onsemi

Description:

MOSFETs 100V/20V N-Channel PTNG MOSFET

Datasheet:

FDMS86180 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about onsemi FDMS86180

In Stock: 3.653

Stock:: 3.653 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	37,52 kr.	37,52 kr.
	28,35 kr.	283,50 kr.
	22,98 kr.	2.298,00 kr.
	20,37 kr.	10.185,00 kr.
	17,46 kr.	17.460,00 kr.
Full Reel (Order in multiples of 3000)
	17,46 kr.	52.380,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	Power-56-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	151 A
Rds On - Drain-Source Resistance:	2.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	84 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	138 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	7 ns
Forward Transconductance - Min:	144 S
Product Type:	MOSFETs
Rise Time:	12 ns
Series:	FDMS86180
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	24 ns
Unit Weight:	122,136 mg

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Filter Document:

Datasheet

FDMS86180 Datasheet (PDF)

Images

Dimensional Outline Drawing (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Shielded Gate PowerTrench® MOSFETs

onsemi Shielded Gate PowerTrench® MOSFETs are 100V N-channel MV MOSFETs developed using an advanced PowerTrench process that integrates Shielded Gate Technology. These MOSFETs minimize on-state resistance (RDS_ON) and reverse recovery charge (Qrr) to deliver superior switching performance and efficiency. The small gate charge (QG), small reverse recovery charge (Qrr), and Figure of Merit (FOM) ensure fast switching for synchronous rectification applications. These devices have little to no voltage overshoot, reduces voltage ringing, and lowers EMI for applications requiring a 100V-rated MOSFET such as power supplies and motor drives. The power density of these MOSFETs allows wider MOSFET de-rating. These devices are 100% UIL tested and are available in an MSL1 robust package design.