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FDD86250

Name: onsemi FDD86250
Brand: onsemi
SKU: 512-FDD86250
Price: 11.79 DKK
Availability: InStock

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Mouser No:

512-FDD86250

Mfr. No:

FDD86250

Mfr.:

onsemi

Description:

MOSFETs 150V N-Channel PowerTrench MOSFET

Datasheet:

FDD86250 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about onsemi FDD86250

In Stock: 28.057

Stock:: 28.057 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	11,79 kr.	11,79 kr.
	7,91 kr.	79,10 kr.
	5,74 kr.	574,00 kr.
Full Reel (Order in multiples of 2500)
	5,74 kr.	14.350,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	51 A
Rds On - Drain-Source Resistance:	31 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	33 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	132 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Forward Transconductance - Min:	28 S
Product Type:	MOSFETs
Series:	FDD86250
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	330 mg

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Datasheet

FDD86250 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

N-Channel PowerTrench® MOSFETs

onsemi N-Channel PowerTrench MOSFETs are produced using onsemi's advanced PowerTrench process that has been specially tailored to minimize on-state resistance and yet maintain superior switching performance. onsemi N-Channel PowerTrench MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.

NTDS015N15MC Shielded Gate PowerTrench® MOSFET

onsemi NTDS015N15MC Shielded Gate PowerTrench^® MOSFET is an N-channel MOSFET that is designed to reduce on-state resistance and maintains good switching performance. This MOSFET features 150V drain-to-source voltage (V_DSS), 15mΩ maximum drain-to-source resistance (R_DS(on)) at 10V, and 50A drain current (I_D). The NTDS015N15MC MOSFET offers low capacitance to minimize driver losses and an optimized gate charge to minimize switching losses. Typical applications include a synchronous rectifier in the secondary of a power supply and motor control.

PowerTrench® MOSFETs

onsemi PowerTrench^® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low R_DS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.