DMN53D0LDW-7

Diodes Incorporated
621-DMN53D0LDW-7
DMN53D0LDW-7

Mfr.:

Description:
MOSFETs N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs

Datasheet:
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Learn more about Diodes Incorporated DMN53D0LDW-7

In Stock: 3.664

Stock:
3.664
Can Dispatch Immediately
On Order:
51.000
Expected 17/04/2026
27.000
Expected 15/06/2026
Factory Lead Time:
24
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
1,80 kr. 1,80 kr.
1,11 kr. 11,10 kr.
0,694 kr. 69,40 kr.
0,627 kr. 313,50 kr.
0,395 kr. 395,00 kr.
Full Reel (Order in multiples of 3000)
0,351 kr. 1.053,00 kr.
0,328 kr. 1.968,00 kr.
0,269 kr. 2.421,00 kr.
0,254 kr. 6.096,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
DMN53D0LDW-13
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
1,92 kr.
Min:
1

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-363-6
N-Channel
2 Channel
50 V
360 mA
1.6 Ohms
- 20 V, 20 V
800 mV
600 pC
- 55 C
+ 150 C
310 mW
Enhancement
Reel
Cut Tape
MouseReel
Brand: Diodes Incorporated
Configuration: Dual
Fall Time: 11 ns, 11 ns
Product Type: MOSFETs
Rise Time: 2.5 ns, 2.5 ns
Series: DMN53
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 19 ns, 19 ns
Typical Turn-On Delay Time: 2.7 ns, 2.7 ns
Unit Weight: 7,500 mg
Products found:
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Attributes selected: 0

TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
8541210101
KRHTS:
8541219000
MXHTS:
85412101
ECCN:
EAR99

DMNxx MOSFETs

Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.

DMN53xx N-Channel Enhancement Mode MOSFETs

Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON) while maintaining superior switching performance. ESD protected to 2KV, these new generation MOSFETs feature low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speeds, and low input/output leakage. Qualified to AEC-Q101 Standards for High Reliability, DMN53xx N-Channel Enhancement Mode MOSFETs are ideal for high-efficiency power management applications.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

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